Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) • Enhancement-mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power MOSFET (N-ch dual)

Dual N-Channel 20 V (D-S) MOSFET

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

文件：232.71 Kbytes Page：7 Pages

pH measuring system for hygienic applica-tions

The type 8201 pH measuring system is suitable for measuring absolute pH values in liquids between pH 0 and pH 12 at medium temperatures of up to 140°C and process pressures of max. 6 bar. Due to its hygienic design and the robust glass-free construction, this model is particularly suitable for

MSD Pro Power Coil

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T3/DS3/E3/STS-1 Input/Output Transformers

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2.2V to 5.5V,Low-Power, 12-Bit, 100kSPS, 8-Channel Data Acquisition System with PGA and SPI??Interface

文件：522.94 Kbytes Page：33 Pages

2.2V to 5.5V,Low-Power, 12-Bit, 100kSPS, 8-Channel Data Acquisition System with PGA and SPI??Interface

文件：678.45 Kbytes Page：35 Pages