Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) • Enhancement-mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power MOSFET (N-ch dual)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：N-ch×2\nGeneration：U-MOSⅢ\nRoHS Compatible Product(s) (#)：Available Drain current (Q1) ID 3 A \nDrain current (Q2) ID 3 A \nPower Dissipation PD 1.35 W \nDrain-Source voltage (Q1) VDSS 20 V \nDrain-Source voltage (Q2) VDSS 20 V ;

Dual N-Channel 20 V (D-S) MOSFET

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

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Pseudo inductance for telephones

The BA8201 and BA8201F are ICs with a choke coil action, capable of extracting the DC current from a telephone line while maintaining a high inductance on the telephone line side. This eliminates the need for a choke coil, and facilitates use of the telephone set line in a variety of applications.

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

18W BTL x 2CH AUDIO POWER AMPLIFIER

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18W BTL x 2CH AUDIO POWER AMPLIFIER

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BTL AUDIO POWER AMPLIFIER

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