TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE(U-MOS4)

Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.6 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA

Power MOSFET (P-ch single)

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS??

文件：228.23 Kbytes Page：7 Pages

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS??

文件：228.23 Kbytes Page：7 Pages

RS-232/422 Low Cap, #24-4pr, FPO, O/A FoilBraid, PVC Jkt, CM, 100Ω

Product Description Computer EIA RS-232/422 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene® insulation, twisted pairs, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), 24 AWG stranded tinned copper drain wire, PVC jacket.

Gigabit Ethernet Controller

文件：1.18854 Mbytes Page：172 Pages

T1/CEPT ISDN PRI Transformers

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Low Capacitance for EIA RS-232 and EIA RS-422 Applications

文件：365.47 Kbytes Page：2 Pages

24 AWG stranded (7x32) TC conductors, Datalene insulation

文件：100.58 Kbytes Page：3 Pages