Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power MOSFET (N-ch single VDSS 30V)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：N-ch + SBD\nGeneration：U-MOSⅤ-H\nRoHS Compatible Product(s) (#)：Available Drain current ID 20 A \nPower Dissipation PD 30 W \nDrain-Source voltage VDSS 30 V ;

N-Channel 30 V (D-S) MOSFET

文件：1.11173 Mbytes Page：7 Pages

CURRENT 8.0 Amperes VOLTAGE 50 TO 100 VOLTS

Features • The plastic package carries Underwrites Laboratory Flammability Classification 94V-0 • High forward current capability • High surge current capability • Construction utilizes void-free molded plastic technique • High temperature soldering guaranteed : 250℃ /10 seconds, 0.375(9.5mm)

Glass Passivated Ultra Fast Recovery Rectifier

Features ◆ Low forward voltage drop ◆ Fast switching for high efficiency ◆ High current capability ◆ High surge current capability ◆ Low reverse leakage current

Glass Passivated Ultra Fast Recovery Rectifier

Features ◆ Low forward voltage drop ◆ Fast switching for high efficiency ◆ High current capability ◆ High surge current capability ◆ Low reverse leakage current

Glass Passivated Super Fast Recovery Rectifier

文件：48.09 Kbytes Page：2 Pages

Glass Passivated Super Fast Recovery Rectifier

文件：48.08 Kbytes Page：2 Pages