TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 4.5mΩ (typ.) • High forward transfer admittance: |Yfs| = 60S (typ.) • Low leakage current: IDSS = −10 µA (max

Lithium Ion Battery Applications Notebook pc Applications Notebook PC Applications Portable Equipment Applications

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

Lithium Ion Battery Applications Notebook pc Applications Notebook PC Applications Portable Equipment Applications

文件：295.69 Kbytes Page：7 Pages

P-Channel 30-V (D-S) MOSFET

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RS232/422 Low Cap, #24-2pr, FPO, O/A FoilBraid, PVC Jkt, CM, 100Ω

Product Description Computer EIA RS-232/422 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene® insulation, twisted pairs, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), 24 AWG stranded tinned copper drain wire, PVC jacket

T-1 Subminiature Lamps

T-1 Subminiature Lamps T-1 Subminiature Short Type Lamps

METAL CABLE CLAMPS

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Low Capacitance for EIA RS-232 and EIA RS-422 Applications

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T1/CEPT ISDN PRI Transformers

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