MOSFETs Silicon N-Channel MOS (U-MOS-H)

Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 9.1 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS

Power MOSFET (N-ch single VDSS 30V)

MOSFETs Silicon N-Channel MOS (U-MOS-H)

Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 9.1 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS

SiC N-Channel MOSFET

FEATURES ·High Speed Switching with Low Capacitances ·High Blocking Voltage with Low On-Resistance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High-voltage Capacitive Loads ·Motor drives

1.5MHz, 1A, High Efficiency PWM Step-Down DC/DC Converter

General Description The RT8059 is a high efficiency Pulse Width Modulated (PWM) step-down DC/DC converter, capable of delivering 1A output current over a wide input voltage range from 2.8V to 5.5V. The RT8059 is ideally suited for portable electronic devices that are powered by 1-cell Li-ion ba

OUTLINE SMD COUPLER DDC

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600mA linear lithium ion battery charger

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