Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

N-Channel 40 V (D-S) MOSFET

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Power MOSFET (N-ch single 30V VDSS 60V)

Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) High-Efficiency DC竊뢈C Converter Applications

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6-Pin DIP Optoisolators Darlington Ouput(No Base Connection)

The MOC8020 and MOC8021 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. The chip to Pin 6 base connection has been eliminated to improve the device’s output performance in higher noise environments. • No Base Connec

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

Matchable Pairs - Emitter and Detector

DESCRIPTION The TCST1103, TCST1202, and TCST1300 are transmissive sensors that include an infrared emitter and phototransistor, located face-to-face on the optical axes in a leaded package which blocks visible light. These part numbers include options for aperture width. FEATURES • Package typ

Dual smart card interface

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Dual smart card interface

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