TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications • Low drain−source ON resistance: RDS (ON) = 11 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.3 to

Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications

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Dual N-Channel 30 V (D-S) MOSFET

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications

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Precision, Dual-Channel Difference Amplifier

GENERAL DESCRIPTION The AD8270 is a low distortion, dual-channel amplifier with internal gain setting resistors. With no external components, it can be configured as a high performance difference amplifier with gains of 0.5, 1, or 2. It can also be configured in over 40 singleended configurations

High-Side Bi-directional Current Shunt Monitor

GENERAL DESCRIPTION The AD8210 is a single-supply, difference amplifier ideal for amplifying small differential voltages in the presence of large common-mode voltages. The operating input common-mode voltage range extends from −2 V to +65 V. The typical supply voltage is 5 V. FEATURES ±4000

Climber Pads for Pole and Tree Climbers

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High Voltage, Bidirectional Current Shunt Monitor

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High Voltage, Bidirectional Current Shunt Monitor

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