TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSIII)

LithiumIonBatteryApplications PortableEquipmentApplications NotebookPCApplications •Lowdrain−sourceONresistance:RDS(ON)=11mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=13S(typ.) •Lowleakagecurrent:IDSS=10µA(max)(VDS=30V) •Enhancementmode:Vth=1.3to

LithiumIonBatteryApplicationsPortableEquipmentApplicationsNotebookPCApplications

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DualN-Channel30V(D-S)MOSFET

文件：1.05355 Mbytes Page：9 Pages

LithiumIonBatteryApplicationsPortableEquipmentApplicationsNotebookPCApplications

文件：275.91 Kbytes Page：7 Pages

Precision,Dual-ChannelDifferenceAmplifier

GENERALDESCRIPTION TheAD8270isalowdistortion,dual-channelamplifierwithinternalgainsettingresistors.Withnoexternalcomponents,itcanbeconfiguredasahighperformancedifferenceamplifierwithgainsof0.5,1,or2.Itcanalsobeconfiguredinover40singleendedconfigurations

High-SideBi-directionalCurrentShuntMonitor

GENERALDESCRIPTION TheAD8210isasingle-supply,differenceamplifieridealforamplifyingsmalldifferentialvoltagesinthepresenceoflargecommon-modevoltages.Theoperatinginputcommon-modevoltagerangeextendsfrom−2Vto+65V.Thetypicalsupplyvoltageis5V. FEATURES ±4000

ClimberPadsforPoleandTreeClimbers

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HighVoltage,BidirectionalCurrentShuntMonitor

文件：354.64 Kbytes Page：16 Pages

HighVoltage,BidirectionalCurrentShuntMonitor

文件：406.35 Kbytes Page：16 Pages