TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs • Small footprint due to small and thin package • Low drain−source ON resistance : RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance : |Yfs| = 18 S (typ.) • Low leakage current : IDSS = 10 µA (max) (VDS =

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

Tone ringer IC for telephone set

Tone ringer IC for telephone set

6-Pin DIP Optoisolators High Voltage Transistor Output(400 Volts)

The MOC8204, MOC8205 and MOC8206 devices consist of gallium arsenide infrared emitting diodes optically coupled to high voltage, silicon, phototransis tor detectors in a standard 6–pin DIP package. They are designed for high voltage applications and are particularly useful in copy machines and sol

NICAM DECODER

DESCRIPTION The TDA8204B performs two main functions, first one is NICAM decoding, second one is audio signal recovery (DAC) combined with audio signal switching (Matrix). An I2S output is provided for digital audio when required and all functions of both the TDA8204B and the TDA8205 are access

LOW FREQUENCY POWER AMPLIFIER

文件：438.19 Kbytes Page：10 Pages

LOW FREQUENCY POWER AMPLIFIER

文件：438.19 Kbytes Page：10 Pages