TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs • Small footprint due to small and thin package • Low drain−source ON resistance : RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance : |Yfs| = 18 S (typ.) • Low leakage current : IDSS = 10 µA (max) (VDS =

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

Description The ACE8204TL uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 2.5V to 8V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by

Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

Description The ACE8204TL uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 2.5V to 8V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM8204 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. AM8204 is available in a SOT-26 package. FEATURES

SC & FC/PC3 Pull-Proof Fiber Optic Connectors

文件：734.86 Kbytes Page：24 Pages

4-Port DVI Broadcaster with Audio

文件：222.64 Kbytes Page：3 Pages