TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs • Small footprint due to small and thin package • Low drain−source ON resistance : RDS (ON) = 14 mΩ (typ.) • High forward transfer admittance : |Yfs| = 8 S (typ.) • Low leakage current : IDSS = 10 µA (max) (VDS = 3

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

pH- and ORP-probes

A probe Type 8203 is inserted into a Bürkert pH or ORP meter, which is a modular device designed for the measurement of: • the pH in clean liquids or liquids containing solids, sulphides or proteins. • the oxidation-reduction potential in clean liquids or liquids containing solids, sulphides o

64K DYNAMIC RAM CONTROLLER

High Common-Mode Voltage, Single-Supply Difference Amplifier

GENERAL DESCRIPTION The AD8203 is a single-supply difference amplifier for amplifying and low-pass filtering small differential voltages in the presence of a large common-mode voltage (CMV). The input CMV range extends from −6 V to +30 V at a typical supply voltage of 5 V. FEATURES Hig

Precision, Dual-Channel Difference Amplifier

GENERAL DESCRIPTION The AD8270 is a low distortion, dual-channel amplifier with internal gain setting resistors. With no external components, it can be configured as a high performance difference amplifier with gains of 0.5, 1, or 2. It can also be configured in over 40 singleended configurations

MSD Blaster Coil

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