Field Effect Transistor Silicon P Channel MOS Type (U-MOS??

Lithium Ion Battery Applications Power Management Switch Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 6.1 mΩ (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −40 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID =

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power MOSFET (P-ch single)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：P-ch\nGeneration：U-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 马来西亚 Drain current ID -12 A \nPower Dissipation PD 1.9 W \nDrain-Source voltage VDSS -40 V \nGate-Source voltage VGSS -25/+20 V ;

P-Channel 30-V (D-S) MOSFET

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10Base-T Interface Module with Enhanced Common Mode Attenuation

10Base-T Interface Module with Enhanced Common Mode Attenuation • General Purpose 10Base-T Filter Module • Complies with or exceeds IEEE 802.3, 10Base-T Standards

Target Specification

General Description The VSC8124 is a four channel, 2.5 Gb/s data re-timer for cleaning up data downstream of optical links or cross point switches. Serial data at the 2.5 Gb/s rate is independently re-timed on four channels, and driven differentially by CML drivers. The re-timing function on each

10 GBPS 1:16 DEMUX WITH CDR AND LIMITING AMPLIFIER

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30-A 12-V Input Programmable Integrated Switching Regulator

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LINER INTERFRATED CIRCUIT

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