Field Effect Transistor Silicon P Channel MOS Type (U-MOS??

Lithium Ion Battery Applications Power Management Switch Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON)= 7.0 mΩ(typ.) • High forward transfer admittance: |Yfs| = 36 S (typ.) • Low leakage current: IDSS= −10 μA (max) (VDS= −30 V) • En

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Load Switch • Notebook Adaptor Switch

Power MOSFET (P-ch single)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：P-ch\nGeneration：U-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 马来西亚 Drain current ID -11 A \nPower Dissipation PD 1.9 W \nDrain-Source voltage VDSS -30 V \nGate-Source voltage VGSS -25/+20 V ;

10Mb/s to 2.7Gb/s Rate Agile, Adaptive Clock and Data Recovery

General Description The VSC8123 is a universal clock and data recovery system designed for a broad range of system applications. The integrated frequency synthesizer provides continuous coverage from 10Mb/s to OC-48+FEC data rates with SONET quality output. In addition to its broadband capability

3V AV/FM 1CHIP TUNER IC

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3V AV/FM 1CHIP TUNER IC

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3V AV/FM 1CHIP TUNER IC

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LINER INTERFRATED CIRCUIT

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