Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power MOSFET (N-ch single VDSS 30V)

Polarity：N-ch\nGeneration：U-MOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 18 A \nPower Dissipation PD 1.9 W \nDrain-Source voltage VDSS 30 V ;

Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)

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AC-DC switching power supply control IC with standby mode

■ Overview The AN8027 and AN8037 are ICs developed for selfexcited switching regulator of RCC local resonance control type. These ICs are designed to achieve stability and high efficiency over a wide input voltage range and loads range (light loads to heavy loads), for supporting input levels us

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

2.5 GHz low voltage, low power RF fractional-N/IF integer frequency synthesizer

GENERAL DESCRIPTION The SA8027 BICMOS device integrates programmable dividers, charge pumps and phase comparators to implement phase-locked loops. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 3 V supplies. FEATURES • Low phase noise • Low

2.5 GHz low voltage, low power RF fractional-N/IF integer frequency synthesizer

GENERAL DESCRIPTION The SA8027 BICMOS device integrates programmable dividers, charge pumps and phase comparators to implement phase-locked loops. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 3 V supplies. FEATURES • Low phase noise • Low