Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

Power MOSFET (P-ch single)

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII)

文件：264.9 Kbytes Page：7 Pages

Channel style heat sink with folded back fins

Channel style heat sink with folded back fins for increased cooling surface area. Available with tin plated solderable tabs for easy attachment to the printed circuit card.

KPCS CDMA 3.5V/28.5dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6109 is a 3.5 V (3.0 V to 4.2 V) high efficiency, 3 stage amplifier module for Korean Band PCS handsets. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Full output power i

44 Pin SOIC Clip Test Clip

文件：38 Kbytes Page：1 Pages

THE BREADBOARDING MEDIUM FOR SURFACE MOUNT

文件：160.1 Kbytes Page：1 Pages

How to Use This Catalog

文件：8.73467 Mbytes Page：116 Pages