Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

Power MOSFET (P-ch single)

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

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Silicon P Channel MOS Type (U-MOS III)

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Silicon P Channel MOS Type (U-MOS III)

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Cellular Dual Mode AMPS/CDMA

PRODUCT DESCRIPTION The AWT6105 is a high power, high efficiency amplifier module for Dual Mode CDMA/AMPS wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability and ruggedness. A low power qui

Single AMC.0 Mid-size bay

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Home Phone Networking Transformer

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Isolation Voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation

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Long Time Support Product for Industrial Applications

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