位置：首页 > IC中文资料 > TPA65R380D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TPA65R380D | 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness | WUMC 紫光国微 |   | |
TPA65R380D | 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness | WUMC 紫光国微 | | |
TPA65R380D | 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness | WUMC 紫光国微 | | |
TPA65R380D | 超结功率 MOSFET | WUMC 紫光国微 | | |
650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness | WUMC 紫光国微 | | ||
N-CHANNEL 650V Super-Junction Power MOSFET in a TO-220F Plastic Package 文件：1.77421 Mbytes Page：9 Pages | FOSHAN 蓝箭电子 | | ||
Extremely low switching loss 文件：295.33 Kbytes Page：8 Pages | SEMIHOW | | ||
Extremely low switching loss 文件：206.44 Kbytes Page：7 Pages | SEMIHOW | | ||
Extremely low switching loss 文件：295.33 Kbytes Page：8 Pages | SEMIHOW | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UNIGROUP/紫光微 |
24+ |
TO-220F |
15000 |
原装正品 假一罚十 |
|||
TI |
24+ |
SOIC |
6000 |
进口原装正品假一赔十,货期7-10天 |
|||
SUNMATE(森美特) |
2019+ROHS |
DO-15 |
66688 |
森美特高品质产品原装正品免费送样 |
|||
TI/德州仪器 |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
TI |
23+ |
QFP |
5000 |
原装正品,假一罚十 |
|||
TexasInstruments |
18+ |
ICAMPAUDIOPWR.7WMONO8SOI |
6800 |
公司原装现货/欢迎来电咨询! |
|||
TI |
24+ |
MSOP-8 |
16800 |
绝对原装进口现货 假一赔十 价格优势! |
|||
TI德州仪器 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
||||
无锡紫光微 |
24+ |
con |
10 |
现货常备产品原装可到京北通宇商城查价格 |
|||
无锡紫光微 |
2447 |
TO-220F |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
TPA65R380D规格书下载地址
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技术参数 耗散功率2.13 W 静态电流4.00 mA 输出功率3.10 W 工作温度(Max)105 ℃ 工作温度(Min)-40 ℃ 耗散功率(Max)2130 mW 电源电压2.5V ~ 5.5V 封装参数 安装方式Surface Mount 引脚数8 封装PowerPad-MSOP-8 外形尺寸 封装PowerPad-MSOP-8 物理参数 工作温度-40℃ ~ 105℃ (TA) 其他 产品生命周期Active
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DdatasheetPDF页码索引
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