采用 PQFN88 封装的 650V 72mΩ 氮化镓GaN FET

650V GaN FET PQFN Series

Description The TP65H070L Series 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. They combine state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Features • JEDEC qualified GaN technology • Dynami

650V GaN FET PQFN Series

文件：1.19479 Mbytes Page：13 Pages

650V GaN FET PQFN Series

Description The TP65H070L Series 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. They combine state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Features • JEDEC qualified GaN technology • Dynami

650V GaN FET PQFN Series

Description The TP65H070L Series 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. They combine state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Features • JEDEC qualified GaN technology • Dynami

650V GaN FET PQFN Series

文件：1.19479 Mbytes Page：13 Pages