Description

The TP65H070L Series 650V, 72mΩ Gallium Nitride (GaN)

FET are normally-off devices. They combine state-of-the-art

high voltage GaN HEMT and low voltage silicon MOSFET

technologies—offering superior reliability and performance.

Features

• JEDEC qualified GaN technology

• Dynamic RDS(on)eff production tested

• Robust design, defined by

— Intrinsic lifetime tests

— Wide gate safety margin

— Transient over-voltage capability

• Very low QRR

• Reduced crossover loss

• RoHS compliant and Halogen-free packaging

Benefits

• Improves efficiency/operation frequencies over Si

• Enables AC-DC bridgeless totem-pole PFC designs

— Increased power density

— Reduced system size and weight

— Overall lower system cost

• Easy to drive with commonly-used gate drivers

• GSD pin layout improves high speed design

Applications

• Datacom

• Broad industrial

• PV inverter

• Servo motor