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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TP65H070G4QS | 650VSuperGaN®FETinTOLL(sourcetab) Description TheTP65H070G4QS650V,72mΩgalliumnitride(GaN)FETisanormally-offdeviceusingTransphorm’sGenIVplatform.Itcombinesastate-of-the-arthighvoltageGaNHEMTwithalowvoltagesiliconMOSFETtooffersuperiorreliabilityandperformance. TheGenIVSuperGaN®platformuses | TRANSPHORM Transphorm |  |   |
650VSuperGaN®FETinTOLL(sourcetab) Description TheTP65H070G4QS650V,72mΩgalliumnitride(GaN)FETisanormally-offdeviceusingTransphorm’sGenIVplatform.Itcombinesastate-of-the-arthighvoltageGaNHEMTwithalowvoltagesiliconMOSFETtooffersuperiorreliabilityandperformance. TheGenIVSuperGaN®platformuses | TRANSPHORM Transphorm | | | |
650VSuperGaN®GaNFETinPQFN(sourcetab) Description TheTP65H070G4LSG650V,72mΩGalliumNitride(GaN)FETisanormally-offdevice.Itcombinesstate-of-the-arthighvoltageGaNHEMTandlowvoltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityandperformance. TheGenIVSuperGaN®platformusesadvancedepiandpatented | TRANSPHORM Transphorm | | | |
650VSuperGaN®GaNFETinPQFN(sourcetab) Description TheTP65H070G4LSGB650V,72mΩGalliumNitride(GaN) FETisanormally-offdevice.Itcombinesstate-of-the-arthigh voltageGaNHEMTandlowvoltagesiliconMOSFET technologies—offeringsuperiorreliabilityandperformance. TheGenIVSuperGaN®platformusesadvancedepiand pate | TRANSPHORM Transphorm | | | |
650VSuperGaN®GaNFETinPQFN(sourcetab) Description TheTP65H070G4LSGB650V,72mΩGalliumNitride(GaN) FETisanormally-offdevice.Itcombinesstate-of-the-arthigh voltageGaNHEMTandlowvoltagesiliconMOSFET technologies—offeringsuperiorreliabilityandperformance. TheGenIVSuperGaN®platformusesadvancedepiand pate | TRANSPHORM Transphorm | | | |
650VSuperGaN®GaNFETinPQFN(sourcetab) Description TheTP65H070G4LSG650V,72mΩGalliumNitride(GaN)FETisanormally-offdevice.Itcombinesstate-of-the-arthighvoltageGaNHEMTandlowvoltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityandperformance. TheGenIVSuperGaN®platformusesadvancedepiandpatented | TRANSPHORM Transphorm | | | |
650VSuperGaN®GaNFETinPQFN(sourcetab) Description TheTP65H070G4PS650V,72mΩGalliumNitride(GaN)FETisanormally-offdevice.Itcombinesstate-of-the-arthighvoltageGaNHEMTandlowvoltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityandperformance. TheGenIVSuperGaN®platformusesadvancedepiandpatentedd | TRANSPHORM Transphorm | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HARRIS |
25+ |
SOP |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
TP |
2025+ |
SOP-20 |
3685 |
全新原厂原装产品、公司现货销售 |
|||
TOPRO |
22+ |
QFP |
5000 |
原装现货库存.价格优势 |
|||
NS |
24+ |
DIP-16 |
37500 |
原装正品现货,价格有优势! |
|||
TPPRO |
23+ |
QFP |
5000 |
原装正品,假一罚十 |
|||
HARRIS |
1998 |
SOP |
472 |
原装现货海量库存欢迎咨询 |
|||
TOPRO |
25+ |
QFP |
6500 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
HARRIS |
24+ |
SOP |
2500 |
自己现货 |
|||
MOT |
24+ |
DIP |
3500 |
原装现货,可开13%税票 |
|||
TOPRO |
24+ |
393625 |
电源IC原装正品有优势 |
TP65H070G4QS芯片相关品牌
TP65H070G4QS规格书下载地址
TP65H070G4QS参数引脚图相关
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TP65H070G4QS数据表相关新闻
DdatasheetPDF页码索引
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