10 to 12 WATT SINGLE and DUAL OUTPUT DC-DC CONVERTERS

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非隔离LED驱动芯片

TP5127是一款专用于LED非隔离降压型恒流驱动集成电路，系统工作在谷底开关模式，转换效率高， EMI低，输出电流自动适应电感的感量变化和输出电压的变化，从而真正实现了恒流驱动LED。\n\nTP5127内部集成500V功率的MOSFET，采用SOP8封装，输出高达220mA的电流，外围只需要很少的器件就可以达到优异的恒流输出。\n\nTP5127内部集成了丰富的保护功能，包括过压保护，短路保护，逐周期电流保护，温度保护和软启动等。\n\nTP5127采用智能热响应抑制技术，自动抑制LED灯的系统温升。\n\nTP51 • 内置500V功率MOSFET\n• 无需辅助线圈供电，外围元件少\n• SOP8封装，输出电流可高达 220mA\n• 谷底开关，高效率，低 EMI\n• 自动补偿电感的感量变化\n• 自动适应输出电压变化\n• 短路保护\n• 温度保护\n• 过压保护/开路保护\n• 智能热响应抑制，自动抑制LED灯的系统温升\n• 即开即亮启动技术\n• 工作温度：- 40 ~ 100℃\n• 封装：SOP8;

非隔离LED驱动芯片

TP5128是一款专用于LED非隔离降压型恒流驱动集成电路，系统工作在谷底开关模式，转换效率高，EMI低，输出电流自动适应电感的感量变化和输出电压的变化，从而真正实现了恒流驱动LED。\n\nTP5128内部集成500V功率的MOSFET，采用DIP8封装，输出高达300mA的电流，外围只需要很少的器件就可以达到优异的恒流输出。\n\nTP5128内部集成了丰富的保护功能，包括过压保护，短路保护，逐周期电流保护，温度保护和软启动等。\n\nTP5128采用智能热响应抑制技术，自动抑制LED灯的系统温升。\n\nTP512 • 内置500V功率MOSFET\n• 无需辅助线圈供电，外围元件少\n• DIP8封装，输出电流可高达 300mA\n• 谷底开关，高效率，低 EMI\n• 自动补偿电感的感量变化\n• 自动适应输出电压变化\n• 短路保护\n• 温度保护\n• 过压保护/开路保护\n• 智能热响应抑制，自动抑制LED灯的系统温升\n• 即开即亮启动技术\n• 工作温度：- 40 ~ 100℃\n• 封装：DIP8;

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N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These feat

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators ■ RF REGULATOR ■ VERY LOW DROPOUT VOLTAGE : 30mV ■ ULTRA LOW OUTPUT VOLTAGE NOISE ■ HIGH PSRR : 70dB ■ LOW STAND-BY CURRENT : 20µA ■ LOW QUIESCENT CURRENT : 150µA FULL LOAD ■ NO CURRENT IN POWER DOWN

Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S.

SUMMARY DESCRIPTION The LRI512 is a contactless memory, powered by an externally transmitted radio wave. It is fully compliant with the ISO15693 recommendation for radio-frequency power and signal interface. The LRI512 contains 512 bits of Electrically Erasable Programmable Memory (EEPROM

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo