N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These feat

RF Manual 16th edition

N沟道硅FET

Blackfin Embedded Processor

GENERAL DESCRIPTION The ADSP-BF512/ADSP-BF512F, ADSP-BF514/ADSPBF514F, ADSP-BF516/ADSP-BF516F, ADSP-BF518/ADSPBF518F processors are members of the Blackfin® family of products, incorporating the Analog Devices/Intel Micro Signal Architecture (MSA). Blackfin processors combine a dual-MAC state-of-

Blackfin Embedded Processor

GENERAL DESCRIPTION The ADSP-BF512/ADSP-BF512F, ADSP-BF514/ADSPBF514F, ADSP-BF516/ADSP-BF516F, ADSP-BF518/ADSPBF518F processors are members of the Blackfin® family of products, incorporating the Analog Devices/Intel Micro Signal Architecture (MSA). Blackfin processors combine a dual-MAC state-of-

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：托盘 描述：JFET N-CH 20V 30MA SOT23 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：管件 描述：JFET N-CH 20V 30MA SOT23 分立半导体产品 晶体管 - FET，MOSFET - 射频

Blackfin Embedded Processor

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators ■ RF REGULATOR ■ VERY LOW DROPOUT VOLTAGE : 30mV ■ ULTRA LOW OUTPUT VOLTAGE NOISE ■ HIGH PSRR : 70dB ■ LOW STAND-BY CURRENT : 20µA ■ LOW QUIESCENT CURRENT : 150µA FULL LOAD ■ NO CURRENT IN POWER DOWN

Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S.

SUMMARY DESCRIPTION The LRI512 is a contactless memory, powered by an externally transmitted radio wave. It is fully compliant with the ISO15693 recommendation for radio-frequency power and signal interface. The LRI512 contains 512 bits of Electrically Erasable Programmable Memory (EEPROM

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo