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TP25价格
参考价格:¥6.2512
型号:TP2502N8-G 品牌:Supertex 备注:这里有TP25多少钱,2025年最近7天走势,今日出价,今日竞价,TP25批发/采购报价,TP25行情走势销售排行榜,TP25报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TP25 | 3.8x6 mm SMT Tactile Switch 文件:172.75 Kbytes Page:1 Pages | GREATECS | ||
TP25 | T系列硅整流二极管 | ETC 知名厂家 | ETC | |
P-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertexs wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with | SUTEX | |||
P-Channel Enhancement Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertexs wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with | SUTEX | |||
P-Channel Enhancement Mode Vertical DMOS FETs General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertexs wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FET General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FET General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FET General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the h | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the h | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the h | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the | SUTEX | |||
P-Channel Enhancement MOSFET Application « DC/DC Converter « Portable equipment and battery « Active Clamp Switch | TECHPUBLIC 台舟电子 | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the | SUTEX | |||
36V, 10MHz, 8V/μs Op Amps Features ⚫ Supply Voltage: 3V to 36V, or ±1.5V to ±18 V ⚫ Differential Input Voltage Range to Supply Rail ⚫ Input Rail to –VS, Rail to Rail Output ⚫ Fast Response: 10 MHz Bandwidth, 8V/μs Slew Rate, 100ns Overload Recovery ⚫ Low Offset Voltage: ±3mV Maximum at 25°C, ±3.5mV Maximum at -40°C | 3PEAK 思瑞浦 | |||
36V, 10MHz, 8V/μs Op Amps Features ⚫ Supply Voltage: 3V to 36V, or ±1.5V to ±18 V ⚫ Differential Input Voltage Range to Supply Rail ⚫ Input Rail to –VS, Rail to Rail Output ⚫ Fast Response: 10 MHz Bandwidth, 8V/μs Slew Rate, 100ns Overload Recovery ⚫ Low Offset Voltage: ±3mV Maximum at 25°C, ±3.5mV Maximum at -40°C | 3PEAK 思瑞浦 | |||
36V, 10MHz, 8V/μs Op Amps Features ⚫ Supply Voltage: 3V to 36V, or ±1.5V to ±18 V ⚫ Differential Input Voltage Range to Supply Rail ⚫ Input Rail to –VS, Rail to Rail Output ⚫ Fast Response: 10 MHz Bandwidth, 8V/μs Slew Rate, 100ns Overload Recovery ⚫ Low Offset Voltage: ±3mV Maximum at 25°C, ±3.5mV Maximum at -40°C | 3PEAK 思瑞浦 | |||
1.5 WATT and DUAL OUTPUT DC-DC CONVERTERS 文件:62.65 Kbytes Page:2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
P-Channel Enhancement-Mode Vertical DMOS FET 文件:485.59 Kbytes Page:14 Pages | Microchip 微芯科技 | |||
MOSFET, P-Channel Enhancement-Mode, -20V, 2.0 Ohm | Microchip 微芯科技 | |||
P-Channel Enhancement-Mode Vertical DMOS FETs | Microchip 微芯科技 | |||
P-Channel Enhancement-Mode Vertical DMOS FET 文件:485.59 Kbytes Page:14 Pages | Microchip 微芯科技 | |||
Topstek Current Transducers 文件:106.97 Kbytes Page:2 Pages | TOPSTEK | |||
MAX250/MAX251Compatible Converter Transformers 文件:803.08 Kbytes Page:2 Pages | TOPPOWER 顶源电子 | |||
Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs 文件:553.01 Kbytes Page:5 Pages | SUTEX | |||
Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs 文件:553.01 Kbytes Page:5 Pages | SUTEX | |||
Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs 文件:553.01 Kbytes Page:5 Pages | SUTEX | |||
Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs 文件:553.01 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement Mode Vertical DMOS FETs 文件:467.91 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement Mode Vertical DMOS FETs 文件:576.14 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement Mode Vertical DMOS FETs 文件:467.91 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FET 文件:645.61 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement Mode Vertical DMOS FETs 文件:576.18 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FET 文件:645.61 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement Mode Vertical DMOS FETs 文件:576.18 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FET 文件:645.61 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement Mode Vertical DMOS FETs 文件:576.18 Kbytes Page:5 Pages | SUTEX | |||
包装:袋 描述:TACKI PAK 2 9/16 X 2 9/16 X 1/2\ 静电控制,防静电,ESD,无尘室产品 静电控制器件容器,防静电仪器盒子 | CORSTAT | |||
包装:袋 描述:TACKI PAK 3 1/2 X 2 9/16 X 1/2\ 静电控制,防静电,ESD,无尘室产品 静电控制器件容器,防静电仪器盒子 | CORSTAT | |||
P-Channel Enhancement Mode Vertical DMOS FETs 文件:639.78 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement Mode Vertical DMOS FETs 文件:639.78 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement Mode Vertical DMOS FETs 文件:711.37 Kbytes Page:6 Pages | SUTEX | |||
P-Channel Enhancement Mode Vertical DMOS FETs 文件:711.37 Kbytes Page:6 Pages | SUTEX | |||
P-Channel Enhancement Mode Vertical DMOS FETs 文件:639.78 Kbytes Page:5 Pages | SUTEX | |||
Photovoltaic Solar Cell Protection Schottky Diode 文件:373.92 Kbytes Page:3 Pages | HY 虹扬科技 | |||
PHOTOVOLTAIC SOLAR CELL PROTECTION SCHOTTKY RECTIFIER 文件:142.4 Kbytes Page:3 Pages | HY 虹扬科技 | |||
Topstek Current Transducers 文件:106.97 Kbytes Page:2 Pages | TOPSTEK | |||
25~30W 3KVAC Isolation Wide Input AC/DC Converters 文件:723.92 Kbytes Page:4 Pages | TOPPOWER 顶源电子 | |||
25~30W 3KVAC Isolation Wide Input AC/DC Converters 文件:700.43 Kbytes Page:4 Pages | TOPPOWER 顶源电子 |
TP25产品属性
- 类型
描述
- 型号
TP25
- 制造商
GREATECS
- 制造商全称
GREATECS
- 功能描述
3.8x6 mm SMT Tactile Switch
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
3PEAK |
23+ |
8-Pin MSOP |
9500 |
加QQ:78517935原装正品有单必成 |
|||
SUPERTEX |
2450+ |
SOT-89 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
3PEAK(思瑞浦) |
24+ |
SOIC-8 |
7348 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
MICROCHIP |
21+ |
SOT-89 |
1458 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
3PEAK |
23+ |
SMD |
16283 |
||||
SUPERTEX |
24+ |
SOT-89 |
25836 |
新到现货,只做全新原装正品 |
|||
3PEAK/思瑞浦 |
25+ |
SOP8 |
60000 |
3PEAK/思瑞浦全新正品TP2582-SR即刻询购立享优惠#长期有订 |
|||
MICROCHIP |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
SUPERTEX |
24+ |
SOT89 |
35200 |
一级代理/放心采购 |
|||
SUPERTEXINC |
2025+ |
SOT89 |
3365 |
全新原厂原装产品、公司现货销售 |
TP25规格书下载地址
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TP25数据表相关新闻
TP3054BDWR
Audio CODEC, Stereo 接口—CODEC , Audio CODECs 接口—CODEC , Audio CODEC, Voice 接口—CODEC , Audio CODEC, Voice 接口—CODEC , Audio CODECs Audio CODEC, Low Power 接口—CODEC , AAC/WMA/MP3 Decoder 接口—CODEC
2020-8-27TP2850
做的是人品,卖的是良心。
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2020-7-8TP2604-SR仪表运放正品就在粤骏腾
TP2604-SR原装现货
2019-8-29
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