P-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

QUAD DARLINGTON POWER DRIVER

Combining AND logic gates and inverting high-current bipolar outputs, the UDN2540B and A2540SLB quad Darlington power drivers provide interface between low-level signal-processing circuits and power loads totaling 360 W. Each of the four independent outputs can sink up to 1.8 A in the on state wit

Threaded Smooth Bore Bushings

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60 MHz (2540B/2540B-GEN) and 100 MHz (2542B/2542B-GEN) bandwidth

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60 MHz (2540B/2540B-GEN) and 100 MHz (2542B/2542B-GEN) bandwidth

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16 Mbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface

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