P-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertexs wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with

P-Channel Enhancement Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu

MOSFET, P-Channel Enhancement-Mode, -240V, 8 Ohm

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperat Low threshold \nHigh input impedance \nLow input capacitance \nFast switching speeds \nFree from secondary breakdown \nLow input and output leakage;

P-Channel Enhancement-Mode Vertical DMOS FET

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P-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertexs wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with

P-Channel Enhancement Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu

P-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertexs wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with

P-Channel Enhancement-Mode Vertical DMOS FET

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MOSFET 240V 8Ohm

P-Channel Enhancement-Mode Vertical DMOS FETs

Video driver hybrid amplifier

DESCRIPTION Hybrid amplifier module mounted in SOT115L package. FEATURES • Typical transition times (10 to 90) with CL at 8.5 pF: – 2.2 ns rise and 2.0 ns fall with 35 V (p-p) swing – 2.3 ns rise and 2.1 ns fall with 40 V (p-p) swing – 2.5 ns rise and 2.2 ns fall with 50 V (p-p)

Video driver hybrid amplifier

DESCRIPTION Hybrid amplifier module mounted in SOT115L package. FEATURES • Typical transition times (10 to 90) with CL at 8.5 pF: – 2.2 ns rise and 2.0 ns fall with 35 V (p-p) swing – 2.3 ns rise and 2.1 ns fall with 40 V (p-p) swing – 2.5 ns rise and 2.2 ns fall with 50 V (p-p)

PNP EPITAXIAL TYPE (SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications • High current type (IC(MAX) = −800mA) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Low VCE (sat) • Complementary to RN1421~RN1427

ECONOLINE - DC/DC - CONVERTER

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