P-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertexs wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with

P-Channel Enhancement-Mode Vertical DMOS FETs

Video driver hybrid amplifier

DESCRIPTION Hybrid amplifier module mounted in SOT115L package. FEATURES • Typical transition times (10 to 90) with CL at 8.5 pF: – 2.2 ns rise and 2.0 ns fall with 35 V (p-p) swing – 2.3 ns rise and 2.1 ns fall with 40 V (p-p) swing – 2.5 ns rise and 2.2 ns fall with 50 V (p-p)

Video driver hybrid amplifier

DESCRIPTION Hybrid amplifier module mounted in SOT115L package. FEATURES • Typical transition times (10 to 90) with CL at 8.5 pF: – 2.2 ns rise and 2.0 ns fall with 35 V (p-p) swing – 2.3 ns rise and 2.1 ns fall with 40 V (p-p) swing – 2.5 ns rise and 2.2 ns fall with 50 V (p-p)

PNP EPITAXIAL TYPE (SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications • High current type (IC(MAX) = −800mA) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Low VCE (sat) • Complementary to RN1421~RN1427

ECONOLINE - DC/DC - CONVERTER

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