PNP EPITAXIAL TYPE (SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications • High current type (IC(MAX) = −800mA) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Low VCE (sat) • Complementary to RN1421~RN1427

Bias resistor built-in transistor (BRT)

Feature：High current\nPolarity：PNP\nInternal Connection：Single\nComplementary Product：RN1424\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC -0.8 A \nCollector-emitter voltage VCEO -50 V ;

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS PNP 50V 0.8A SMINI 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

Video driver hybrid amplifier

DESCRIPTION Hybrid amplifier module mounted in SOT115L package. FEATURES • Typical transition times (10 to 90) with CL at 8.5 pF: – 2.2 ns rise and 2.0 ns fall with 35 V (p-p) swing – 2.3 ns rise and 2.1 ns fall with 40 V (p-p) swing – 2.5 ns rise and 2.2 ns fall with 50 V (p-p)

Video driver hybrid amplifier

DESCRIPTION Hybrid amplifier module mounted in SOT115L package. FEATURES • Typical transition times (10 to 90) with CL at 8.5 pF: – 2.2 ns rise and 2.0 ns fall with 35 V (p-p) swing – 2.3 ns rise and 2.1 ns fall with 40 V (p-p) swing – 2.5 ns rise and 2.2 ns fall with 50 V (p-p)

P-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertexs wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with

ECONOLINE - DC/DC - CONVERTER

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