Ultra-Low Power 200nA, 1.6V, RRIO, Push-Pull Output Comparators

The TP2011/2/4 push-pull output comparators feature the world-class lowest nanopower (250nA maximum) and fast 13μs response time capability, allowing operation from 1.6V to 5.5V. Input common-mode range beyond supply rails makes the TP201x an ideal choice for power-sensitive, low-voltage (2-cell) ap • Ultra-Low Supply Current: 200 nA per channel\n\n• Fast Response Time: 13 μs Propagation Delay, with 100 mV Overdrive\n\n• Internal Hysteresis for Clean Switching\n\n• Offset Voltage: ± 12.0 mV Maximum\n\n• Input Bias Current: 6 pA Typical\n\n• No Phase Reversal for Overdriven Inputs\n\n• Low Suppl;

Ultra-Low Power 200nA, 1.6V, RRIO, Push-Pull Output Comparators

文件：1.67471 Mbytes Page：21 Pages

Multi-plexers

RF滤波器

丝印代码：2012S；Ultra-Low Power 200nA, 1.6V, RRIO, Push-Pull Output Comparators

文件：1.67471 Mbytes Page：21 Pages

丝印代码：C12YW；Ultra-Low Power 200nA, 1.6V, RRIO, Push-Pull Output Comparators

文件：1.67471 Mbytes Page：21 Pages

丝印代码：2012V；Ultra-Low Power 200nA, 1.6V, RRIO, Push-Pull Output Comparators

文件：1.67471 Mbytes Page：21 Pages

NPN DARLINGTON POWER MODULE

■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW RthJUNCTION TO CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE ■ FULLY INSULATED PACKAGE (UL COMPLIANT) ■ EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: ■ MOTOR CONTROL

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. PolyfetTMrocess features gold metal for greatly extended lifetim

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Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

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Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

SCR FOR OVERVOLTAGE PROTECTION

DESCRIPTION The TYP 212 ---> 1012 Family uses high perform ance glass passivated chips technology. These Silicon Controlled Rectifiers are designed for overvoltage protection in crowbar circuits application. FEATURES .HIGH SURGE CURRENT CAPABILITY .HIGH dI/dt RATING .HIGH STABILIT