TOPSwitch-GX Family Extended Power, Design Flexible, EcoSmart, Integrated Off-line Switcher

Description TOPSwitch-GXuses the same proven topology as TOPSwitch, cost effectively integrating the high voltage power MOSFET, PWM control, fault protection and other control circuitry on to a single CMOS chip. Many new functions are integrated to reduce system cost and improve design flexibil

TOPSwitch-GX Family Extended Power, Design Flexible, EcoSmart, Integrated Off-line Switcher

Description TOPSwitch-GXuses the same proven topology as TOPSwitch, cost effectively integrating the high voltage power MOSFET, PWM control, fault protection and other control circuitry on to a single CMOS chip. Many new functions are integrated to reduce system cost and improve design flexibil

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

N-channel silicon field-effect transistors

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N-channel silicon field-effect transistors

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VHF power MOS transistor

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