TOPSwitch-GX Family Extended Power, Design Flexible, EcoSmart, Integrated Off-line Switcher

Description TOPSwitch-GXuses the same proven topology as TOPSwitch, cost effectively integrating the high voltage power MOSFET, PWM control, fault protection and other control circuitry on to a single CMOS chip. Many new functions are integrated to reduce system cost and improve design flexibil

封装/外壳：8-SMD（7 个接脚），鸥翼 包装：管件 描述：IC OFFLINE SWITCH FLYBACK 8SMD 集成电路（IC） AC DC 转换器，离线开关

0-290 W扩展功率解决方案，设计灵活并采用了EcoSmart节能技术

TOPSwitch-GX Family Extended Power, Design Flexible, EcoSmart, Integrated Off-line Switcher

Description TOPSwitch-GXuses the same proven topology as TOPSwitch, cost effectively integrating the high voltage power MOSFET, PWM control, fault protection and other control circuitry on to a single CMOS chip. Many new functions are integrated to reduce system cost and improve design flexibil

TOPSwitch-GX Family Extended Power, Design Flexible, EcoSmart, Integrated Off-line Switcher

Description TOPSwitch-GXuses the same proven topology as TOPSwitch, cost effectively integrating the high voltage power MOSFET, PWM control, fault protection and other control circuitry on to a single CMOS chip. Many new functions are integrated to reduce system cost and improve design flexibil

封装/外壳：8-SMD（7 个接脚），鸥翼 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC OFFLINE SWITCH FLYBACK 8SMD 集成电路（IC） AC DC 转换器，离线开关

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

N-channel silicon field-effect transistors

文件：97.4 Kbytes Page：11 Pages

N-channel silicon field-effect transistors

文件：97.4 Kbytes Page：11 Pages

VHF power MOS transistor

文件：91.6 Kbytes Page：12 Pages