Three-terminal Off-line PWM Switch

Low Cost Replacement for Discrete Switchers • 20 to 50 fewer components - cuts cost, increases reliability • Source-connected tab and Controlled MOSFET turn-on reduce EMI and EMI filter costs • Allows for a 50 smaller and lighter solution • Cost competitive with linears above 5 W Up to 90 Ef

Three-terminal Off-line PWM Switch

Description The TOPSwitch family implements, with only three pins, all functions necessary for an off-line switched mode control system: high voltage N-channel power MOSFET with controlled turn-on gate driver, voltage mode PWM controller with integrated 100 kHz oscillator, high voltage start-

Three-terminal Off-line PWM Switch

Description The TOPSwitch family implements, with only three pins, all functions necessary for an off-line switched mode control system: high voltage N-channel power MOSFET with controlled turn-on gate driver, voltage mode PWM controller with integrated 100 kHz oscillator, high voltage start-up b

Three-terminal Off-line PWM Switch

Description The TOPSwitch family implements, with only three pins, all functions necessary for an off-line switched mode control system: high voltage N-channel power MOSFET with controlled turn-on gate driver, voltage mode PWM controller with integrated 100 kHz oscillator, high voltage start-up b

Three-terminal Off-line PWM Switch

Low Cost Replacement for Discrete Switchers • 20 to 50 fewer components - cuts cost, increases reliability • Source-connected tab and Controlled MOSFET turn-on reduce EMI and EMI filter costs • Allows for a 50 smaller and lighter solution • Cost competitive with linears above 5 W Up to 90 Ef

Three-terminal Off-line PWM Switch

• 元件数目较少的低成本集成开关解决方案\r\n• 采用反激式、正激式、升压或降压拓扑结构\r\n• 系统级锁存热关断保护\r\n• 内置自动重启动和限流;

封装/外壳：TO-220-3 包装：管件 描述：IC OFFLINE SW MULT TOP TO220-3 集成电路（IC） AC DC 转换器，离线开关

封装/外壳：TO-220-3 包装：管件 描述：IC OFFLINE SW MULT TOP TO220-3 集成电路（IC） AC DC 转换器，离线开关

P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH203 is supplied in the SOT23 subminiature sur

Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.