25A SCRs

DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

25A SCRs

DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

标准单向可控硅

丝印代码：TN2540-12G；Standard SCR, D²PAK, 25 A, 1200 V

Features • Max. blocking voltage = VDRM, VRRM = 1200 V • IGT maximum = 40 mA • High static and dynamic commutation at Tj = 125 °C – dl/dt = 50 A/μs – dV/dt = 1500 V/μs • ECOPACK®2 compliant (RoHS and HF compliance) Applications • Solar • Wind renewable energy inverters • Solid State Rela

丝印代码：TN2540-12G；Standard SCR, D²PAK, 25 A, 1200 V

Features • Max. blocking voltage = VDRM, VRRM = 1200 V • IGT maximum = 40 mA • High static and dynamic commutation at Tj = 125 °C – dl/dt = 50 A/μs – dV/dt = 1500 V/μs • ECOPACK®2 compliant (RoHS and HF compliance) Applications • Solar • Wind renewable energy inverters • Solid State Rela

MOSFET, N-Channel Enhancement-Mode, 18V, 2.5 Ohm

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temper Low threshold \nHigh input impedance \nLow input capacitance (110pF max.) \nFast switching speeds \nLow on-resistance \nFree from secondary breakdown \nLow input and output leakage;

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET

General Description The Supertex TN2529 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, an

Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET

General Description The Supertex TN2529 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, an

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex TN2540 is a low threshold enhancement mode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors,

Standard 25 A SCRs

Description These standard 25 A SCRs are suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities. Features ■ On-state rms current, IT(RMS)25 A ■ Repetitive peak off-state voltage, VDRM/VRRM 600 to

25A SCRs

DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

25A SCRs

DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

25A SCRs

DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

isc Thyristors

FEATURES · Max. Blocking Voltage= VDRM, VRRM= 1200 V · IGT Maximum = 40 mA · Available in SMD D2PAK with Anode in Backside APPLICATIONS · Wind Renewable Energy Inverters · Battery Charge · Uninterruptible Power Supply (UPS)

isc Thyristors

APPLICATIONS ·It is suitable to fit all modes of control found in applications such as overvoltage crowbar protection,motor control circuits in power tools and kitchen aids,in-rush current limiting circuits, capacitive discharge ignition, voltage regulation circuits etc. ·Minimum Lot-to-Lot v

SCR

DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

25A SCRs

DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

25A SCRs

DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

Standard 25 A SCRs

Description These standard 25 A SCRs are suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities. Features ■ On-state rms current, IT(RMS)25 A ■ Repetitive peak off-state voltage, VDRM/VRRM 600 to

25A SCRs

DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

Standard 25 A SCRs

Description These standard 25 A SCRs are suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities. Features ■ On-state rms current, IT(RMS)25 A ■ Repetitive peak off-state voltage, VDRM/VRRM 600 to

25A SCRs

DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

SCR

DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

25A SCRs

DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

25A SCRs

DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

Standard 25 A SCRs

Description These standard 25 A SCRs are suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities. Features ■ On-state rms current, IT(RMS)25 A ■ Repetitive peak off-state voltage, VDRM/VRRM 600 to

Standard 25 A SCRs

Description These standard 25 A SCRs are suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities. Features ■ On-state rms current, IT(RMS)25 A ■ Repetitive peak off-state voltage, VDRM/VRRM 600 to

SCR

DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex TN2540 is a low threshold enhancement mode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors,

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex TN2540 is a low threshold enhancement mode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors,

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex TN2540 is a low threshold enhancement mode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors,

25A SCRs

DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

25A SCRs

DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

25A SCRs

DESCRIPTION The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

Ferrite toroids

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Ferrite toroids

文件：44.73 Kbytes Page：3 Pages

Ferrite toroids

文件：44.73 Kbytes Page：3 Pages

Ferrite toroids

文件：44.73 Kbytes Page：3 Pages

Ferrite toroids

文件：44.73 Kbytes Page：3 Pages

25A SCRS

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