N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FETs

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

USB POWER CONTROL SWITCHES

The A2525EL/M and A2535EL/M are integrated high-side power switches, optimized for self-powered and bus-powered Universal Serial Bus (USB) applications. Few external components are necessary to satisfy USB requirements. The A2525EL/EM ENABLE inputs are active high; the A2535EL/EM are active low.

USB POWER CONTROL SWITCHES

The A2525EL/M and A2535EL/M are integrated high-side power switches, optimized for self-powered and bus-powered Universal Serial Bus (USB) applications. Few external components are necessary to satisfy USB requirements. The A2525EL/EM ENABLE inputs are active high; the A2535EL/EM are active low.

Threaded Smooth Bore Bushings

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Premier Supplier of Electronic Hardware

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Capable of 1.8V Gate Drive, Lower Gate Charge

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