位置:首页 > IC中文资料第10939页 > TN2535
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TN2535 | N-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the | SUTEX | ||
TN2535 | N-Channel Enhancement-Mode Vertical DMOS FETs | MICROCHIP 微芯科技 | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the | SUTEX | |||
SWITCHMODE??Power Rectifiers SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse | MOTOROLA 摩托罗拉 | |||
SWITCHMODE??Power Rectifiers SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse | MOTOROLA 摩托罗拉 | |||
SWITCHMODE??Power Rectifier . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, | MOTOROLA 摩托罗拉 | |||
MEDIUM CURRENT OVERVOLTAGE TRANSIENT SUPPRESSORS Overvoltage Transient Suppressors . . . designed for applications requiring a low voltage rectifier with reverse avalanche characteristics for use as reverse power transient suppressors. Developed to suppress transients in the automotive system, these devices operate in the forward mode as standa | MOTOROLA 摩托罗拉 | |||
SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package 文件:105.66 Kbytes Page:6 Pages | MOTOROLA 摩托罗拉 |
TN2535产品属性
- 类型
描述
- 型号
TN2535
- 制造商
SUPERTEX
- 制造商全称
SUPERTEX
- 功能描述
N-Channel Enhancement-Mode Vertical DMOS FETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
25+ |
N/A |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
STMicroelectronics |
25+ |
N/A |
20948 |
样件支持,可原厂排单订货! |
|||
ST/意法半导体 |
21+ |
D2PAK-2 (TO-263-2) |
8080 |
只做原装,质量保证 |
|||
TN2535N8 |
25+ |
2000 |
2000 |
||||
SUPERTEX |
2025+ |
SOP16 |
4825 |
全新原厂原装产品、公司现货销售 |
|||
ST/意法半导体 |
25+ |
D2PAK-2 (TO-263-2) |
30000 |
原装正品公司现货,假一赔十! |
|||
ST |
25+ |
TO-263 |
20000 |
原装 |
|||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源! |
|||
SUPERTEX |
24+ |
SOT-89-3 |
6230 |
只做原装正品 |
|||
MICROCHIP/微芯 |
2025+ |
SOT-89 |
5000 |
原装进口,免费送样品! |
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TN2535规格书下载地址
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