N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

MOSFET, N-Channel Enhancement-Mode, 100V, 1.5 Ohm

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature Low threshold (2.0V max.) \nHigh input impedance \nLow input capacitance (125pF max.) \nFast switching speeds \nLow on-resistance \nFree from secondary breakdown \nLow input and output leakage;

N-Channel Enhancement-Mode Vertical DMOS FET

文件：770.79 Kbytes Page：14 Pages

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FETs

N-Channel Enhancement-Mode Vertical DMOS FET

文件：770.79 Kbytes Page：14 Pages

Lamps for Photolithography

Description PerkinElmer Optoelectronics is a leading manufacturer of mercury short arc lamps ranging in output power from 1000 to 8000 watts. These lamps are used in the production of printed circuit boards, liquid crystal displays and semiconductors. The HSH Series lamps are used worldwide in mi

Lamps for Photolithography

Description PerkinElmer Optoelectronics is a leading manufacturer of mercury short arc lamps ranging in output power from 1000 to 8000 watts. These lamps are used in the production of printed circuit boards, liquid crystal displays and semiconductors. The HSH Series lamps are used worldwide in mi

Silicon NPNTransistor High Frequency Video Output

Features: • High Gain Bandwidth Product: fT = 2GHz • High Current Capacity: IC = 500mA Applications: • High–Definition CRT Display Video Output • Wide–Band Amp

50-150 MHz 1:10 SDRAM clock driver

DESCRIPTION The PCK2510SA is a high-performance, low-skew, low-jitter, phase-locked loop (PLL) clock driver. It uses a PLL to precisely align, in both frequency and phase, the feedback (FBOUT) output to the clock (CLK) input signal. It is specifically designed for use with synchronous DRAMs. The

50-150 MHz 1:10 SDRAM clock driver

DESCRIPTION The PCK2510S is a high-performance, low-skew, low-jitter, phase-locked loop (PLL) clock driver. It uses a PLL to precisely align, in both frequency and phase, the feedback (FBOUT) output to the clock (CLK) input signal. It is specifically designed for use with synchronous DRAMs. The P