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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TN0106N3 | N-CHANNELENHANCEMENT-MODED-MOSPOWERFETs [TOPAZSEMICONDUCTOR] N-CHANNELENHANCEMENT-MODED-MOSPOWERFETs | ETC1List of Unclassifed Manufacturers 未分类制造商 |  |   |
TN0106N3 | N-ChannelEnhancement-ModeVerticalDMOSFETs Features ■Lowthreshold—2.0Vmax. ■Highinputimpedance ■Lowinputcapacitance—50pFtypical ■Fastswitchingspeeds ■Lowonresistance ■Freefromsecondarybreakdown ■Lowinputandoutputleakage ■ComplementaryN-andP-channeldevices | SUTEX Supertex, Inc |  | |
N-ChannelEnhancement-ModeVerticalDMOSFET 文件：640.15 Kbytes Page：5 Pages | SUTEX Supertex, Inc | | | |
N-ChannelEnhancement-ModeVerticalDMOSFET AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan | SUTEX Supertex, Inc | | | |
N-ChannelEnhancement-Mode N-ChannelEnhancement-ModeVerticalDMOSPowerFETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
TN0106N3产品属性
- 类型
描述
- 型号
TN0106N3
- 功能描述
MOSFET 60V 3Ohm
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SUPERTEX |
23+ |
TO-92 |
1963 |
绝对现货库存 |
|||
MICROCHIP/美国微芯 |
21+ |
TO-92(TO-92-3) |
13880 |
公司只售原装,支持实单 |
|||
SUPERTEX |
17+ |
TO-92 |
1450 |
只做原装正品 |
|||
TN0106N3 |
77 |
77 |
|||||
MICROCHIP/美国微芯 |
23+ |
TO-92(TO-92-3) |
12700 |
买原装认准中赛美 |
|||
MICROCHIP/美国微芯 |
21+ |
TO-92(TO-92-3) |
30000 |
全新原装 现货 价优 |
|||
MICROCHIP/美国微芯 |
2023+ |
TO-92(TO-92-3) |
6000 |
原装正品现货、支持第三方检验、终端BOM表可配单提供 |
|||
MICROCHIP/美国微芯 |
2023 |
TO-92(TO-92-3) |
5000 |
公司原装现货/支持实单 |
|||
MICROCHIP/美国微芯 |
2022+ |
TO-92(TO-92-3) |
7600 |
原厂原装,假一罚十 |
|||
MICROCHIP |
22+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
TN0106N3芯片相关品牌
TN0106N3规格书下载地址
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2019-10-30
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