贴片式陶瓷电容器

SILICON TRANSISTORS

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS

Customer Specification

Construction 1) Conductor a) Material Tinned Copper, per ASTM B-33 and CID-A-A-59551, latest revision b) Stranding Solid 2) Braid Data a) Nominal Dimensions .031 x .020 Inches b) AWG of Ends 36 c) Number of Carriers 16 d) Nominal Percent Coverage N/A e) Total Number of Ends 16 f) Approx.

ROTARY MOTION | PRECISION SENSOR

Features • Servo Mount / Ball Bearing • 7/8” TO 3” Diameter Servo Mount • Conductive Plastic Single-turn Precision Potentiometers

9V SUPER HEAVY DUTY

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500/10 31 GW

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