TMUX821x 100-V, Flat Ron, 1:1 (SPST), 4-Channel Switches with Latch-Up Immunity and 1.8-V Logic

1 Features • High supply voltage capable: – Dual supply: ±10 V to ±50 V – Single supply: 10 V to 100 V – Asymmetric dual supply operation • Consistent parametric across supply voltages • Latch-up immune • High continuous current: 200 mA • Low crosstalk: –110 dB • Low input leakage: 10 pA

TMUX821x 100-V, Flat Ron, 1:1 (SPST), 4-Channel Switches with Latch-Up Immunity and 1.8-V Logic

1 Features • High supply voltage capable: – Dual supply: ±10 V to ±50 V – Single supply: 10 V to 100 V – Asymmetric dual supply operation • Consistent parametric across supply voltages • Latch-up immune • High continuous current: 200 mA • Low crosstalk: –110 dB • Low input leakage: 10 pA

TMUX821x 100-V, Flat Ron, 1:1 (SPST), 4-Channel Switches with Latch-Up Immunity and 1.8-V Logic

1 Features • High supply voltage capable: – Dual supply: ±10 V to ±50 V – Single supply: 10 V to 100 V – Asymmetric dual supply operation • Consistent parametric across supply voltages • Latch-up immune • High continuous current: 200 mA • Low crosstalk: –110 dB • Low input leakage: 10 pA

TMUX821x 100-V, Flat Ron, 1:1 (SPST), 4-Channel Switches with Latch-Up Immunity and 1.8-V Logic

1 Features • High supply voltage capable: – Dual supply: ±10 V to ±50 V – Single supply: 10 V to 100 V – Asymmetric dual supply operation • Consistent parametric across supply voltages • Latch-up immune • High continuous current: 200 mA • Low crosstalk: –110 dB • Low input leakage: 10 pA

Analog Video, RG59, #20 Solid BCCS, 95 BC Braid, PE Jacket

Product Description 20 AWG solid .032 bare copper-covered steel conductor, foam polyethylene insulation, bare copper braid shield (95 coverage), polyethylene jacket.

Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD

Description The ACE8212B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by

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