Radiation Hardened 12V Half-Bridge GaN FET Driver

Features ▪ Qualified to Renesas Rad Hard QML-V Equivalent Screening and QCI Flow (R34TB0001EU) • All screening and QCI is in accordance with MIL-PRF-38535L Class-V ▪ Up to 20V bootstrap voltage half-bridge driver ▪ Programmable 4.5V to 5.5V gate drive voltage ▪ Single tri-level PWM input co

Radiation Hardened 12V Half-Bridge GaN FET Driver

Features ▪ Qualified to Renesas Rad Hard QML-V Equivalent Screening and QCI Flow (R34TB0001EU) • All screening and QCI is in accordance with MIL-PRF-38535L Class-V ▪ Up to 20V bootstrap voltage half-bridge driver ▪ Programmable 4.5V to 5.5V gate drive voltage ▪ Single tri-level PWM input co

Radiation Hardened 12V Half-Bridge GaN FET Driver

Features ▪ Qualified to Renesas Rad Hard QML-V Equivalent Screening and QCI Flow (R34TB0001EU) • All screening and QCI is in accordance with MIL-PRF-38535L Class-V ▪ Up to 20V bootstrap voltage half-bridge driver ▪ Programmable 4.5V to 5.5V gate drive voltage ▪ Single tri-level PWM input co

Radiation Hardened 12V Half-Bridge GaN FET Driver

Features ▪ Qualified to Renesas Rad Hard QML-V Equivalent Screening and QCI Flow (R34TB0001EU) • All screening and QCI is in accordance with MIL-PRF-38535L Class-V ▪ Up to 20V bootstrap voltage half-bridge driver ▪ Programmable 4.5V to 5.5V gate drive voltage ▪ Single tri-level PWM input co

Radiation Hardened 12V Half-Bridge GaN FET Driver

Features ▪ Qualified to Renesas Rad Hard QML-V Equivalent Screening and QCI Flow (R34TB0001EU) • All screening and QCI is in accordance with MIL-PRF-38535L Class-V ▪ Up to 20V bootstrap voltage half-bridge driver ▪ Programmable 4.5V to 5.5V gate drive voltage ▪ Single tri-level PWM input co