丝印代码：TMP421；±1°C Remote and Local TEMPERATURE SENSOR

1FEATURES 234• SOT23-8 and DSBGA (WCSP) PACKAGES • ±1°C REMOTE DIODE SENSOR (MAX) • ±1.5°C LOCAL TEMPERATURE SENSOR (MAX) • SERIES RESISTANCE CANCELLATION • n-FACTOR CORRECTION • TWO-WIRE/ SMBus™ SERIAL INTERFACE • MULTIPLE INTERFACE ADDRESSES • DIODE FAULT DETECTION • RoHS COMPLIANT AND

丝印代码：TMP421；±1°C Remote and Local TEMPERATURE SENSOR

1FEATURES 234• SOT23-8 and DSBGA (WCSP) PACKAGES • ±1°C REMOTE DIODE SENSOR (MAX) • ±1.5°C LOCAL TEMPERATURE SENSOR (MAX) • SERIES RESISTANCE CANCELLATION • n-FACTOR CORRECTION • TWO-WIRE/ SMBus™ SERIAL INTERFACE • MULTIPLE INTERFACE ADDRESSES • DIODE FAULT DETECTION • RoHS COMPLIANT AND

High Voltage Transistors(PNP)

High Voltage Transistors PNP Silicon

High Voltage Transistors(PNP Silicon)

High Voltage Transistors PNP Silicon

RF POWER TRANSISTORS NPN SILICON

The RF Line ​​​​​​​NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping

2.6 mm Series

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