Low-Power, LM75-Compatible Digital Temperature Sensor WithS MBus and I 2C Interface

Features Operating temperature range：-55°C ~ +128°C Temperature accuracy: ± 0.5° C (-40°C ~ +125°C) Supply voltage range: 1.4V ~ 5.5V Low quiescent current: Temperature conversion: 40μA Shutdown mode: 0.3μA Resolution: 9~12 bits (user defined) Digital output: SMBus TM, I2C interface compa

TMPx75 Temperature Sensor With I2C and SMBus Interface in Industry Standard LM75 Form Factor and Pinout

1 Features • TMP175: 27 Addresses • TMP75: 8 Addresses, NIST Traceable • Digital Output: SMBus™, Two-Wire, and I2C Interface Compatibility • Resolution: 9 to 12 Bits, User-Selectable • Accuracy: – ±1 °C (Typical) from −40 °C to +125 °C – ±2 °C (Maximum) from −40 °C to +125 °C • Low Quiesc

Digital Temperature Sensor with Two-Wire Interface

文件：640.01 Kbytes Page：20 Pages

封装/外壳：8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SENSOR DIGITAL -40C-125C 8VSSOP 传感器，变送器 温度传感器 - 模拟和数字输出

TMPx75 Temperature Sensor With I2C and SMBus Interface in Industry Standard LM75 Form Factor and Pinout

1 Features • TMP175: 27 Addresses • TMP75: 8 Addresses, NIST Traceable • Digital Output: SMBus™, Two-Wire, and I2C Interface Compatibility • Resolution: 9 to 12 Bits, User-Selectable • Accuracy: – ±1 °C (Typical) from −40 °C to +125 °C – ±2 °C (Maximum) from −40 °C to +125 °C • Low Quiesc

Digital Temperature Sensor with Two-Wire Interface

文件：640.01 Kbytes Page：20 Pages

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

N-CHANNEL BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance

Silicon Complementary Transistors High Voltage, Medium Power Switch

Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high–speed switching and linear amplifier applications for high–voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Fea

L-Band PA DRIVER AMPLIFIER

DESCRIPTION µPG175TA is a GaAs MMIC for PA driver amplifier with variable gain function which was developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. FEATURES • Low Operation Voltage: