1.5°C Accurate Digital Temperature Sensor with SPI Interface

FEATURES DIGITAL OUTPUT: SPI-Compatible Interface RESOLUTION: 12-Bit + Sign, 0.0625°C ACCURACY: ±1.5°C from −25°C to +85°C (max) LOW QUIESCENT CURRENT: 50μA (max) WIDE SUPPLY RANGE: 2.7V to 5.5V TINY SOT23-6 PACKAGE OPERATION TO 150°C APPLICATIONS POWER-SUPPLY TEMPERATURE MONITORING

1.5°C Accurate Digital Temperature Sensor with SPI Interface

FEATURES DIGITAL OUTPUT: SPI-Compatible Interface RESOLUTION: 12-Bit + Sign, 0.0625°C ACCURACY: ±1.5°C from −25°C to +85°C (max) LOW QUIESCENT CURRENT: 50μA (max) WIDE SUPPLY RANGE: 2.7V to 5.5V TINY SOT23-6 PACKAGE OPERATION TO 150°C APPLICATIONS POWER-SUPPLY TEMPERATURE MONITORING

具有 SPI 接口、采用 SOT-23 封装的增强型产品 1.5°C、2.7V 至 5.5V 数字温度传感器<

The TMP121 and TMP123 are SPI-compatible temperature sensors available in the tiny SOT23-6 package. Requiring no external components, the TMP121 and TMP123 are capable of measuring temperatures within 2°C of accuracy over a temperature range of -40°C to 125°C. Low supply current and a supply range f • Controlled Baseline \n• Extended Temperature Performance of -40°C to 125°C\n• Enhanced Product-Change Notification\n• Digital Output: SPI-Compatible Interface\n• Accuracy: ±1.5°C from -25°C to 85°C (max)\n• Wide Supply Range: 2.7 V to 5.5 V\n• Operation to 150°C\n• Power-Supply Temperature Monitor;

1.5째C ACCURATE DIGITAL TEMPERATURE SENSOR WITH SPI??INTERFACE

文件：566.05 Kbytes Page：13 Pages

Recording Writer for MSSI121

Description The MSSI121/241/241B is an one time programmable CMOS VLSI ASIC that can memorize voice for 7-12 / 13-24 seconds using 6-bit MOSEL qualified coding method (MPCM). Most of the necessary circuit are built in like oscillator, ROM, DAC and interface logic. Versatile functions can be perfo

Germanium PNP Transistor Audio Frequency Power Amplifier

Description: The NTE121 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier.

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board