丝印代码：TM8211；TMUX821x 100-V, Flat Ron, 1:1 (SPST), 4-Channel Switches with Latch-Up Immunity and 1.8-V Logic

1 Features • High supply voltage capable: – Dual supply: ±10 V to ±50 V – Single supply: 10 V to 100 V – Asymmetric dual supply operation • Consistent parametric across supply voltages • Latch-up immune • High continuous current: 200 mA • Low crosstalk: –110 dB • Low input leakage: 10 pA

丝印代码：TM8211；TMUX821x 100-V, Flat Ron, 1:1 (SPST), 4-Channel Switches with Latch-Up Immunity and 1.8-V Logic

1 Features • High supply voltage capable: – Dual supply: ±10 V to ±50 V – Single supply: 10 V to 100 V – Asymmetric dual supply operation • Consistent parametrics across supply voltages • Latch-up immune • High continuous current: 200 mA • Low crosstalk: –110 dB • Low input leakage: 10 pA

丝印代码：TM8211；TMUX821x 100-V, Flat Ron, 1:1 (SPST), 4-Channel Switches with Latch-Up Immunity and 1.8-V Logic

1 Features • High supply voltage capable: – Dual supply: ±10 V to ±50 V – Single supply: 10 V to 100 V – Asymmetric dual supply operation • Consistent parametric across supply voltages • Latch-up immune • High continuous current: 200 mA • Low crosstalk: –110 dB • Low input leakage: 10 pA

丝印代码：TM8212；TMUX821x 100-V, Flat Ron, 1:1 (SPST), 4-Channel Switches with Latch-Up Immunity and 1.8-V Logic

1 Features • High supply voltage capable: – Dual supply: ±10 V to ±50 V – Single supply: 10 V to 100 V – Asymmetric dual supply operation • Consistent parametric across supply voltages • Latch-up immune • High continuous current: 200 mA • Low crosstalk: –110 dB • Low input leakage: 10 pA

丝印代码：TM8212；TMUX821x 100-V, Flat Ron, 1:1 (SPST), 4-Channel Switches with Latch-Up Immunity and 1.8-V Logic

1 Features • High supply voltage capable: – Dual supply: ±10 V to ±50 V – Single supply: 10 V to 100 V – Asymmetric dual supply operation • Consistent parametric across supply voltages • Latch-up immune • High continuous current: 200 mA • Low crosstalk: –110 dB • Low input leakage: 10 pA

丝印代码：TM8212；TMUX821x 100-V, Flat Ron, 1:1 (SPST), 4-Channel Switches with Latch-Up Immunity and 1.8-V Logic

1 Features • High supply voltage capable: – Dual supply: ±10 V to ±50 V – Single supply: 10 V to 100 V – Asymmetric dual supply operation • Consistent parametrics across supply voltages • Latch-up immune • High continuous current: 200 mA • Low crosstalk: –110 dB • Low input leakage: 10 pA

丝印代码：TM8213；TMUX821x 100-V, Flat Ron, 1:1 (SPST), 4-Channel Switches with Latch-Up Immunity and 1.8-V Logic

1 Features • High supply voltage capable: – Dual supply: ±10 V to ±50 V – Single supply: 10 V to 100 V – Asymmetric dual supply operation • Consistent parametrics across supply voltages • Latch-up immune • High continuous current: 200 mA • Low crosstalk: –110 dB • Low input leakage: 10 pA

丝印代码：TM8213；TMUX821x 100-V, Flat Ron, 1:1 (SPST), 4-Channel Switches with Latch-Up Immunity and 1.8-V Logic

1 Features • High supply voltage capable: – Dual supply: ±10 V to ±50 V – Single supply: 10 V to 100 V – Asymmetric dual supply operation • Consistent parametric across supply voltages • Latch-up immune • High continuous current: 200 mA • Low crosstalk: –110 dB • Low input leakage: 10 pA

丝印代码：TM8213；TMUX821x 100-V, Flat Ron, 1:1 (SPST), 4-Channel Switches with Latch-Up Immunity and 1.8-V Logic

1 Features • High supply voltage capable: – Dual supply: ±10 V to ±50 V – Single supply: 10 V to 100 V – Asymmetric dual supply operation • Consistent parametric across supply voltages • Latch-up immune • High continuous current: 200 mA • Low crosstalk: –110 dB • Low input leakage: 10 pA

丝印代码：TM8212；TMUX821x 100-V, Flat Ron, 1:1 (SPST), 4-Channel Switches with Latch-Up Immunity and 1.8-V Logic

文件：1.26628 Mbytes Page：32 Pages

模数/数模转换器(ADC/DAC)

16 - bit digital analog converter

文件：320.74 Kbytes Page：4 Pages

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

Integrated Circuit TV Chroma Demodulator

Description: Specifically designed to match advances in color picture tube phosphors, the NTE821 is a monolithic silicon integrated circuit in a 14–Lead DIP type package and consists of three output amplifiers, a new resistor matrix, two double–balanced chroma demodulators, and a very stable bias

NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to UHF band. FEATURES • Low noise: NF= 1.2 dB TYP.@ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: IS21el2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 6-pi

NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to UHF band. FEATURES • Low noise: NF= 1.2 dB TYP.@ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: IS21el2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 6-pi

Low Voltage, Low Power, R-to-R Output, 5 MHz Op Amps

文件：1.06883 Mbytes Page：24 Pages

Integrated Circuit TV Chroma Demodulator