N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

N-CHANNEL POWER MOSFETS

FEATURES ● Lower RDS(ON) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Lower input capacitance ● Extended safe operating area ● Improved high temperature reliability

N-Channel Power MOSFETs, 3.0 A, 450 V/500 V

isc N-Channel MOSFET Transistor

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N-Channel Power MOSFETs

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POWER INDUCTOR

●FEATURE 1. Excellent solder heat resistance(add “C” is for high current type) 2. Low voltage drops and small variations inductance ●APPLICATION 1. DC power supply circuits 2. Power line choke coils…etc

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

Mill-Max Spring-loaded Connectors Minimize Noise

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3M??Scotch짰 Label Protection Tape 821

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Panel Mount , for 5x20mm Fuses

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