| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TLV705P | 具有使能功能和主动输出放电功能的 200mA、高 PSRR、低 IQ、低压降稳压器 The TLV705 series of low-dropout (LDO) linear regulators are low quiescent current devices with excellent line and load transient performance. These devices are designed for power-sensitive applications, with a precision band gap. An error amplifier provides typical accuracy of 0.5%. Low output • Very Low Dropout: \n• 145 mV at IOUT = 200 mA\n• Accuracy: 0.5% Typical\n• Available in Fixed-Output Voltages From 0.7 V to 4.8 V\n• High PSRR: 70 dB at 1 kHz\n• Thermal Shutdown and Overcurrent Protection\n• Available in an Ultra-Low Profile (0.15-mm Maximum Height) PicoStar Package Option; | TI 德州仪器 | ||
TLV705P | TLV705x 200-mA, Low IQ, Low-Noise, Low-Dropout Regulator in Ultra-Small, 0.8-mm 횞 0.8-mm DSBGA and PicoStar? 文件:1.06828 Mbytes Page:32 Pages | TI 德州仪器 | ||
TLV705P | Thermal Shutdown and Overcurrent Protection 文件:1.16164 Mbytes Page:33 Pages | TI 德州仪器 | ||
TLV705P | 200-mA, Low IQ, Low-Noise, Low-Dropout Regulator in Ultra-Small 0.8-mm x 0.8-mm WCSP 文件:966.1 Kbytes Page:24 Pages | TI 德州仪器 | ||
Silicon Controlled Rectifiers Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P | MOTOROLA 摩托罗拉 | |||
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 150.0 Watts Single Ended Package Style AM HIGH EFFICI | POLYFET | |||
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu | POLYFET | |||
GaAlAs Semiconductor Laser 文件:40.45 Kbytes Page:2 Pages | PANASONIC 松下 | |||
Silicon MOS IC 文件:30.64 Kbytes Page:2 Pages | PANASONIC 松下 |
TLV705P产品属性
- 类型
描述
- Iout (Max) (A):
0.2
- Vin (Max) (V):
5.5
- Vin (Min) (V):
2
- Vout (Max) (V):
3.3
- Vout (Min) (V):
1.8
- Fixed output options (V):
1.8
- Noise (uVrms):
48
- Iq (Typ) (mA):
0.03
- Thermal resistance θJA (°C/W):
160
- Rating:
Catalog
- Load capacitance (Min) (µF):
0.1
- Regulated outputs (#):
1
- Features:
Enable
- Accuracy (%):
2
- PSRR @ 100 KHz (dB):
51
- Dropout voltage (Vdo) (Typ) (mV):
220
- Operating temperature range (C):
-40 to 125
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
99 |
TLV705P规格书下载地址
TLV705P参数引脚图相关
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- TLV70719PDQNT
- TLV70719PDQNR
- TLV70718PDQNT
- TLV70718PDQNR
- TLV70718PDCKT
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- TLV707115DQNT
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- TLV707_13
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- TLV702P
- TLV7022
- TLV7021
- TLV702
- TLV701X
- TLV7012
- TLV7011
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- TLV700
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