FAMILY OF 550-pA/Ch 3-MHz RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS

Controlled Baseline − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree† Rail-To-Rail Input/Output Wide Bandwidth . . . 3 MHz

FAMILY OF 550-(mu)A/Ch 3-MHz RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high voltage switching applications.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 2.5A, RDS(ON) = 280mW @VGS = 10V. RDS(ON) = 330mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-89 package. RoHS compliant.

N-Channel 100-V MOSFET

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N-Channel 100-V (D-S) MOSFET

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Low cost sinusoidal control of BLDC motors with Hall sensors using ST7FMC

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