MOSFET P-Ch, Enhancement Mode High Speed Switch

Features: • Dynamic dv/dt Rating • Fast Switching • Ease of Paralleling • Simple Drive Requirements • TO220 Case Style

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high voltage switching applications.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 2.5A, RDS(ON) = 280mW @VGS = 10V. RDS(ON) = 330mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-89 package. RoHS compliant.

N-Channel 100-V MOSFET

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N-Channel 100-V (D-S) MOSFET

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Low cost sinusoidal control of BLDC motors with Hall sensors using ST7FMC

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