TOSHIBA Photocoupler Photorelay

Telecommunications Measurement and Control Equipment Data Acquisition System Measurement Equipment The Toshiba TLP222A and TLP222A-2 consist of a gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a DIP package whose withstanding voltage is 60 V. These photorel

Photorelay (MOSFET output, 1-form-a)

Application Scope：Measurement instrumentation / Security equipments\nNumber of Circuits：1\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本\nSafety Standard：Approved　:　UL 1577 / cUL (CSA Component Acceptance Service No. 5A)*Download Online Certification of Safety Standard(UL 1577)*Downloa ON-state current ION 0.5 A \nOFF-state output terminal voltage VOFF 60 V \nOperating Temperature (Max) Topr 85 ℃ \nOperating Temperature (Min) Topr -40 ℃ \nIsolation voltage BVs@1minute (Min) BVS 2500 Vrms ;

Measurement and Control Equipment

文件：187.85 Kbytes Page：6 Pages

Telecommunications Measurement and Control Equipment Data Acquisition System Measurement Equipment

文件：181.46 Kbytes Page：6 Pages

TOSHIBA Photocoupler Photorelay

Telecommunications Measurement and Control Equipment Data Acquisition System Measurement Equipment The Toshiba TLP222A and TLP222A-2 consist of a gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a DIP package whose withstanding voltage is 60 V. These photorel

Photorelay (MOSFET output, 2-form-a)

Application Scope：Measurement instrumentation / Data acquisition system\nNumber of Circuits：2\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本\nSafety Standard：Approved　:　UL 1577 / cUL (CSA Component Acceptance Service No. 5A)*Download Online Certification of Safety Standard(UL 1577)*Dow ON-state current ION 0.5 A \nOFF-state output terminal voltage VOFF 60 V \nOperating Temperature (Max) Topr 85 ℃ \nOperating Temperature (Min) Topr -40 ℃ \nIsolation voltage BVs@1minute (Min) BVS 2500 Vrms ;

封装/外壳：4-DIP（0.300"，7.62mm） 包装：散装 描述：SSR RELAY SPST-NO 500MA 0-60V 继电器 固态继电器

Measurement and Control Equipment

文件：187.85 Kbytes Page：6 Pages

Measurement and Control Equipment

文件：187.85 Kbytes Page：6 Pages

Telecommunications Measurement and Control Equipment Data Acquisition System Measurement Equipment

文件：181.46 Kbytes Page：6 Pages

封装/外壳：8-DIP（0.300"，7.62mm） 包装：卷带（TR） 描述：SSR RELAY SPST-NO 500MA 0-60V 继电器 固态继电器

Telecommunications Measurement and Control Equipment Data Acquisition System Measurement Equipment

文件：181.46 Kbytes Page：6 Pages

丝印代码：N9*；COMMON CATHODE SILICON DUAL SWITCHING DIODE

This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−416/SC−90 package which is designed for low power surface mount applications, where board space is at a premium. Features • Fast trr • Low CD

SOT-416/SC-90 PACKAGE COMMON CATHODE DUAL SWITCHING DIODE SURFACE MOUNT

Common Cathode Dual Switching Diode Surface Mount This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board spac

SOT-416/SC-90 PACKAGE COMMON ANODE DUAL SWITCHING DIODE SURFACE MOUNT

This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board space is at a premium. • Fast trr • Low CD • Available

Field Effect Transistor Dual Gate N-Channel MOSFET

Field Effect Transistor Dual Gate N–Channel MOSFET

Transistor array to drive the small motor

Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) For motor drives ■ Features • Small and lightweight • Low power consumption (low VCE(sat) transistor used) • Low voltage drive • Transistors with built-in resistor with 6 elements incorporated