Photorelay (MOSFET output, 1-form-a)

Application Scope：Measurement instrumentation / Security equipments\nNumber of Circuits：1\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本\nSafety Standard：Approved　:　UL 1577 / cUL (CSA Component Acceptance Service No. 5A) / EN 60747-5-5*Download Online Certification of Safety Standard(U ON-state current ION 0.4 A \nOFF-state output terminal voltage VOFF 60 V \nOperating Temperature (Max) Topr 85 ℃ \nOperating Temperature (Min) Topr -40 ℃ \nIsolation voltage BVs@1minute (Min) BVS 1500 Vrms ;

TOSHIBA Photocoupler Photorelay

文件：179.6 Kbytes Page：6 Pages

Photocoupler Photorelay

文件：185.11 Kbytes Page：7 Pages

Photorelay (MOSFET output, 1-form-a)

Feature：General use / Economical\nApplication Scope：Measurement instrumentation / Security equipments\nNumber of Circuits：1\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本\nSafety Standard：Approved　:　UL 1577 / cUL (CSA Component Acceptance Service No. 5A)*Download Online Certification o ON-state current ION 0.5 A \nOFF-state output terminal voltage VOFF 60 V \nOperating Temperature (Max) Topr 110 ℃ \nOperating Temperature (Min) Topr -40 ℃ \nIsolation voltage BVs@1minute (Min) BVS 3750 Vrms ;

封装/外壳：4-SMD，鸥翼 包装：管件 描述：SSR RELAY SPST-NO 400MA 0-60V 继电器 固态继电器

封装/外壳：4-SMD，鸥翼 包装：卷带（TR） 描述：SSR RELAY SPST-NO 400MA 0-60V 继电器 固态继电器

Photocoupler Photorelay

文件：185.11 Kbytes Page：7 Pages

Photocouplers Photorelay

文件：132.13 Kbytes Page：6 Pages

GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 12 mW (typ.) ● Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) ● Good optical power output linearity with respect to input current ● Wide d

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE