| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TLN226 | Infrared LED for sensors Application Scope：Space optical transmission\nRoHS Compatible Product(s) (#)：Available | TOSHIBA 东芝 |   | |
TLN226 | INFRARED LED FOR SPACE-OPTICAL-TRANSMISSION 文件：208.84 Kbytes Page：5 Pages | TOSHIBA 东芝 | | |
TLN226 | INFRARED LED FOR SPACE-OPTICAL-TRANSMISSION 文件：259.63 Kbytes Page：5 Pages | TOSHIBA 东芝 | | |
Infrared LED for sensors Application Scope：Space optical transmission\nRoHS Compatible Product(s) (#)：Available | TOSHIBA 东芝 | | ||
INFRARED LED FOR SPACE-OPTICAL-TRANSMISSION 文件：208.84 Kbytes Page：5 Pages | TOSHIBA 东芝 | | ||
INFRARED LED FOR SPACE-OPTICAL-TRANSMISSION 文件：208.84 Kbytes Page：5 Pages | TOSHIBA 东芝 | | ||
NPN video transistor DESCRIPTION NPN silicon transistor encapsulated in a 4-lead plastic SOT223 package. APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors. | PHILIPS 飞利浦 | | ||
Germanium PNP Transistor Audio Power Amp Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high–power output applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . 35V Collector–Emitter Voltage (RB | NTE | | ||
SILICON TRIACS Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3) | POINN | | ||
SILICON TRIACS Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3) | POINN | | ||
SILICON TRIACS Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3) | POINN | |
TLN226产品属性
- 类型
描述
- Output Power (Min)：
14 mW
- Peak Wavelength (Typ.)：
870 nm
TLN226芯片相关品牌
TLN226规格书下载地址
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2019-10-9
DdatasheetPDF页码索引
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