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位置：首页 > IC中文资料第11614页 > TIC226

TIC226晶体管资料

  • TIC226A别名：TIC226A三极管、TIC226A晶体管、TIC226A晶体三极管

  • TIC226A生产厂家：

  • TIC226A制作材料：Triac

  • TIC226A性质：

  • TIC226A封装形式：直插封装

  • TIC226A极限工作电压：100V

  • TIC226A最大电流允许值：8A

  • TIC226A最大工作频率：<1MHZ或未知

  • TIC226A引脚数：3

  • TIC226A最大耗散功率：

  • TIC226A放大倍数：

  • TIC226A图片代号：B-10

  • TIC226Avtest：100

  • TIC226Ahtest：999900

  • TIC226Aatest：8

  • TIC226Awtest：0

  • TIC226A代换 TIC226A用什么型号代替：BT137/…,MAC222…,TAG224…,T2802…,

型号 功能描述 生产厂家 企业 LOGO 操作
TIC226

SILICON TRIACS

Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)

POINN

TIC226

SILICON TRIACS

ETC

知名厂家

TIC226

SILICON TRIACS

POINN

TIC226

Thyristor

COMSET

TIC226

SILICON TRIACS

文件：181.73 Kbytes Page：4 Pages

BOURNS

伯恩斯

TIC226

SILICON TRIACS

文件：112.26 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TIC226A

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarityof gate signal with main Terminal 2 at either polarity. SILICON BIDIRECTIONAL TRIODE THYRISTOR • 8 A RMS • 70 A Peak • Glass Passivated

COMSET

TIC226B

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarityof gate signal with main Terminal 2 at either polarity. SILICON BIDIRECTIONAL TRIODE THYRISTOR • 8 A RMS • 70 A Peak • Glass Passivated

COMSET

TIC226B

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarityof gate signal with main Terminal 2 at either polarity. • High current triacs • 16 A RMS • 70 A Peak • Glass Passivated Wafer • 200

COMSET

TIC226C

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarityof gate signal with main Terminal 2 at either polarity. • High current triacs • 16 A RMS • 70 A Peak • Glass Passivated Wafer • 200

COMSET

TIC226C

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarityof gate signal with main Terminal 2 at either polarity. SILICON BIDIRECTIONAL TRIODE THYRISTOR • 8 A RMS • 70 A Peak • Glass Passivated

COMSET

TIC226D

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarityof gate signal with main Terminal 2 at either polarity. • High current triacs • 16 A RMS • 70 A Peak • Glass Passivated Wafer • 200

COMSET

TIC226D

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarityof gate signal with main Terminal 2 at either polarity. SILICON BIDIRECTIONAL TRIODE THYRISTOR • 8 A RMS • 70 A Peak • Glass Passivated

COMSET

TIC226D

SILICON TRIACS

Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)

POINN

TIC226D

Glass Passivated Wafer

8 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1 - 3)

SYC

TIC226E

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarityof gate signal with main Terminal 2 at either polarity. SILICON BIDIRECTIONAL TRIODE THYRISTOR • 8 A RMS • 70 A Peak • Glass Passivated

COMSET

TIC226E

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarityof gate signal with main Terminal 2 at either polarity. • High current triacs • 16 A RMS • 70 A Peak • Glass Passivated Wafer • 200

COMSET

TIC226M

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarityof gate signal with main Terminal 2 at either polarity. SILICON BIDIRECTIONAL TRIODE THYRISTOR • 8 A RMS • 70 A Peak • Glass Passivated

COMSET

TIC226M

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarityof gate signal with main Terminal 2 at either polarity. • High current triacs • 16 A RMS • 70 A Peak • Glass Passivated Wafer • 200

COMSET

TIC226M

SILICON TRIACS

Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)

POINN

TIC226N

SILICON TRIACS

Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)

POINN

TIC226N

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarityof gate signal with main Terminal 2 at either polarity. SILICON BIDIRECTIONAL TRIODE THYRISTOR • 8 A RMS • 70 A Peak • Glass Passivated

COMSET

TIC226N

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarityof gate signal with main Terminal 2 at either polarity. • High current triacs • 16 A RMS • 70 A Peak • Glass Passivated Wafer • 200

COMSET

TIC226S

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarityof gate signal with main Terminal 2 at either polarity. • High current triacs • 16 A RMS • 70 A Peak • Glass Passivated Wafer • 200

COMSET

TIC226S

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarityof gate signal with main Terminal 2 at either polarity. SILICON BIDIRECTIONAL TRIODE THYRISTOR • 8 A RMS • 70 A Peak • Glass Passivated

COMSET

TIC226S

SILICON TRIACS

Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)

POINN

TIC226A

SILICON BIDIRECTIONAL TRIODE THYRISTOR

文件：165.05 Kbytes Page：4 Pages

COMSET

TIC226A_12

SILICON BIDIRECTIONAL TRIODE THYRISTOR

文件：165.05 Kbytes Page：4 Pages

COMSET

TIC226B

SILICON BIDIRECTIONAL TRIODE THYRISTOR

文件：165.05 Kbytes Page：4 Pages

COMSET

TIC226C

SILICON BIDIRECTIONAL TRIODE THYRISTOR

文件：165.05 Kbytes Page：4 Pages

COMSET

TIC226D

SILICON BIDIRECTIONAL TRIODE THYRISTOR

文件：165.05 Kbytes Page：4 Pages

COMSET

TIC226D

SILICON TRIACS

文件：112.26 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TIC226D

SILICON TRIACS

文件：181.73 Kbytes Page：4 Pages

BOURNS

伯恩斯

TIC226D

isc Triacs

文件：109.08 Kbytes Page：1 Pages

ISC

无锡固电

TIC226E

SILICON BIDIRECTIONAL TRIODE THYRISTOR

文件：165.05 Kbytes Page：4 Pages

COMSET

TIC226M

SILICON BIDIRECTIONAL TRIODE THYRISTOR

文件：165.05 Kbytes Page：4 Pages

COMSET

TIC226M

SILICON TRIACS

文件：112.26 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TIC226M

isc Triacs

文件：109.08 Kbytes Page：1 Pages

ISC

无锡固电

TIC226M

SILICON TRIACS

文件：181.73 Kbytes Page：4 Pages

BOURNS

伯恩斯

TIC226M-S

封装/外壳：TO-220-3 包装：管件 描述：TRIAC 600V 8A TO220 分立半导体产品 晶闸管 - TRIAC

ETC

知名厂家

TIC226N

SILICON TRIACS

文件：112.26 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TIC226N

SILICON TRIACS

文件：181.73 Kbytes Page：4 Pages

BOURNS

伯恩斯

TIC226N

isc Triacs

文件：109.08 Kbytes Page：1 Pages

ISC

无锡固电

TIC226N

SILICON BIDIRECTIONAL TRIODE THYRISTOR

文件：165.05 Kbytes Page：4 Pages

COMSET

TIC226N-S

封装/外壳：TO-220-3 包装：管件 描述：TRIAC 800V 8A TO220 分立半导体产品 晶闸管 - TRIAC

ETC

知名厂家

TIC226S

SILICON BIDIRECTIONAL TRIODE THYRISTOR

文件：165.05 Kbytes Page：4 Pages

COMSET

TIC226S

SILICON TRIACS

文件：112.26 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TIC226S

SILICON TRIACS

文件：181.73 Kbytes Page：4 Pages

BOURNS

伯恩斯

BFQ226

NPN video transistor

DESCRIPTION NPN silicon transistor encapsulated in a 4-lead plastic SOT223 package. APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors.

PHILIPS

飞利浦

NTE226

Germanium PNP Transistor Audio Power Amp

Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high–power output applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . 35V Collector–Emitter Voltage (RB

NTE

TIC226产品属性

  • 类型

    描述

  • 型号

    TIC226

  • 制造商

    COMSET

  • 制造商全称

    Comset Semiconductor

  • 功能描述

    SILICON BIDIRECTIONAL TRIODE THYRISTOR

TIC226供应商更多...

更新时间：2026-3-14 17:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市创新迹电子有限公司
TIC226D-S
BOURNS/伯恩斯
22+
TO-220
20000
只做原装 品质保障
询价
深圳市振宏微科技有限公司
TIC226S
TI
23+
TO-220
10000
专做原装正品,假一罚百!
询价
深圳市金华微盛电子有限公司
TIC226N
BOURNS
19+
TO-220
32500
询价
深圳市东来宝电子科技有限公司
TIC226D-S
BOURNS/伯恩斯
24+
TO-220
47186
郑重承诺只做原装进口现货
询价
深圳市盈慧通电子有限公司
TIC226D
TI(德州仪器)
2511
8484
电子元器件采购降本30%!原厂直采,砍掉中间差价
询价
艾睿（深圳）半导体有限公司
TIC226M
TI/德州仪器
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
深圳市安富世纪电子有限公司
TIC226D
POWER
23+
TO-220
450
全新原装正品现货,支持订货
询价
深圳市达恩科技有限公司
TIC226N-S
Bourns
24+
NA
3000
进口原装正品优势供应
询价
中天科工半导体（深圳）有限公司
TIC226D
BOURNS/伯恩斯
20+
TO-220
38560
原装优势主营型号-可开原型号增税票
询价
深圳市金芯阳科技有限公司
TIC226M
BOURNS
24+
TO-220
7800
原装现货 假一赔百
询价

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