High Intensity LED in Ø 3 mm Tinted Diffused Package

DESCRIPTION These devices have been designed to meet the increasing demand for AlInGaP technology general indicating and lighting purposes. They are housed in a 3 mm diffused plastic package. The wide viewing angle of these devices provides a high brightness. All packing units are categoriz

AlInGaP technology

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High Intensity LED in 횠 3 mm Tinted Diffused Package

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封装/外壳：径向 包装：散装 描述：LED RED DIFFUSED T-1 T/H 光电器件 LED 指示 - 分立

High Intensity LED in Ø 3 mm Tinted Diffused Package

High Intensity LED in Ø 3 mm Tinted Diffused Package

DESCRIPTION These devices have been designed to meet the increasing demand for AlInGaP technology general indicating and lighting purposes. They are housed in a 3 mm diffused plastic package. The wide viewing angle of these devices provides a high brightness. All packing units are categoriz

High Intensity LED in Ø 3 mm Tinted Diffused Package

DESCRIPTION These devices have been designed to meet the increasing demand for AlInGaP technology general indicating and lighting purposes. They are housed in a 3 mm diffused plastic package. The wide viewing angle of these devices provides a high brightness. All packing units are categoriz

DO-41 Case

General Purpose Transistors

General Purpose Transistors NPN Silicon

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE 40 Volts POWER 625 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 600mA • Complimentary (PNP) device:2N4403 • Pb free product are available :99 Sn above can meet RoHS environment substance directive

TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN)

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NPN General Purpose Amplifier

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