High Intensity LED, ∅ 3 mm Tinted Diffused

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High Intensity LED in 횠 3 mm Tinted Diffused Package

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封装/外壳：径向 包装：卷带（TR） 描述：LED RED DIFFUSED T-1 T/H 光电器件 LED 指示 - 分立

High Intensity LED in 횠 3 mm Tinted Diffused Package

文件：104.78 Kbytes Page：5 Pages

High Output Xenon Flashlamp

Description The new FX-4400 Light Source from PerkinElmer Optoelectronics is a compact, high-output, long-life pulsed xenon flashlamp that offers exceptional arc stability, microsecond pulse durations and a high-intensity continuous line spectrum from the deep UV to the far IR. Features

GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 10 mW (typ.) ● Fast response and high-speed modulation capability : fC = 20 MHz (typ.) ● TO-18 standard type package

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DESCRIPTION NPN switching transistor in a SOT89 plastic package. PNP complement: PXT4403. FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • Switching and linear amplification in industrial and consumer applications.

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DESCRIPTION NPN switching transistor in a SOT223 plastic package. PNP complement: PZT4403. FEATURES • High current (max. 600 mA) • Low voltage. APPLICATIONS • Switching and linear amplification in industrial and consumer applications.

Silicon NPN(PNP) epitaxial planer transistor

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